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英諾賽科與ASML簽署合作協(xié)議

發(fā)布日期:2021-01-22   瀏覽量:3541

2021年1月21日,中國(guó)珠海-英諾賽科科技有限公司和ASML公司達(dá)成批量購(gòu)買(mǎi)高產(chǎn)能i-line和KrF光刻機(jī)的協(xié)議,用于制造先進(jìn)的硅基氮化鎵功率器件。

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全球領(lǐng)先的硅基氮化鎵集成器件制造商英諾賽科科技有限公司和光刻機(jī)制造廠商ASML近期達(dá)成批量購(gòu)買(mǎi)高產(chǎn)能i-line和KrF光刻機(jī)的合作協(xié)議。ASML是全球芯片制造設(shè)備領(lǐng)導(dǎo)廠商,其生產(chǎn)的XT400和XT860 的i-line和KrF經(jīng)過(guò)升級(jí),能夠在硅基晶圓上制造氮化鎵功率器件。憑借其獨(dú)特的TWINSCAN(雙工件臺(tái))架構(gòu),ASML的i-line和KrF光刻機(jī)能提供最卓越的性能、市場(chǎng)上最高的生產(chǎn)效率以及最低的成本。雙工件臺(tái)技術(shù)架構(gòu)已經(jīng)成為全球300mm和200mm晶圓量產(chǎn)生產(chǎn)線中的先進(jìn)光刻技術(shù)代表 。英諾賽科將在今年第二季度搬入首批光刻機(jī),這是第三代半導(dǎo)體領(lǐng)域首次量產(chǎn)應(yīng)用先進(jìn)的ASML TWINSCAN(雙工件臺(tái))光刻技術(shù),這一實(shí)施標(biāo)志著第三代半導(dǎo)體制造技術(shù)正式進(jìn)入了一個(gè)全新的紀(jì)元。

英諾賽科科技有限公司成立于2015年12月,是一家致力于第三代半導(dǎo)體硅基氮化鎵芯片制造的企業(yè)。公司成功建成投產(chǎn)全球首條200mm硅基氮化鎵晶圓與功率器件量產(chǎn)生產(chǎn)線,主要產(chǎn)品包括200mm硅基氮化鎵晶圓及30V-650V氮化鎵功率器件。英諾賽科產(chǎn)品的設(shè)計(jì)與性能均達(dá)到國(guó)際最先進(jìn)水平,并已廣泛應(yīng)用于PD快充、立體(3D)相機(jī)、移動(dòng)電子設(shè)備(包括智能手機(jī)、筆記本電腦、平板電腦)等領(lǐng)域。英諾賽科致力于打造世界一流品牌,并為全球?qū)捊麕О雽?dǎo)體產(chǎn)業(yè)的發(fā)展做出貢獻(xiàn)。

功率器件和電路可以通過(guò)高開(kāi)關(guān)頻率和高功率密度來(lái)實(shí)現(xiàn)高效的能源管理, 這些功能可以廣泛用于快速增長(zhǎng)的新興市場(chǎng)如數(shù)據(jù)中心、可再生能源和下一代無(wú)線通訊網(wǎng)絡(luò)等。除較小的外形尺寸外,由于其高頻率、高功率密度等特性,硅基氮化鎵還是快速充電,直流電網(wǎng),新能源汽車(chē)等市場(chǎng)理想選擇?!暗谌雽?dǎo)體”材料包括氮化鎵(GaN) 、碳化硅(SiC)、氮化鋁(AlN)、金剛石和氧化鋅(ZnO),而氮化鎵(GaN)是“第三代半導(dǎo)體”材料的典型代表,具有廣闊的市場(chǎng)應(yīng)用前景。

2021年1月21日在珠海舉行的簽約儀式上,英諾賽科CEO 孫在亨先生 說(shuō):“我非常榮幸的宣布英諾賽科與ASML達(dá)成合作協(xié)議,我們將在一起努力用氮化鎵技術(shù)改變未來(lái)。作為一家致力于推動(dòng)第三代半導(dǎo)體創(chuàng)新革命的企業(yè),我們需要與像ASML這樣全球半導(dǎo)體領(lǐng)軍的企業(yè)合作,采用更加先進(jìn)的制造工藝,實(shí)現(xiàn)更加高的性能、良率和產(chǎn)出,在快速成長(zhǎng)的各種應(yīng)用領(lǐng)域(例如快充、TOF相機(jī)(Time-of-Flight Camera) 、智能手機(jī)、電動(dòng)車(chē)、數(shù)據(jù)中心等)共同推出最先進(jìn)的解決方案以及下個(gè)世代的氮化鎵器件,為我們的客戶、伙伴和消費(fèi)者創(chuàng)造更有價(jià)值的產(chǎn)品和服務(wù)。第三代半導(dǎo)體是一次產(chǎn)業(yè)革命性的升級(jí),變革從不簡(jiǎn)單,它需要我們攜手共進(jìn),攜手共進(jìn)我們將實(shí)現(xiàn)合作共贏。

ASML全球副總裁,中國(guó)區(qū)總裁沈波表示:“我們很高興成為英諾賽科的合作伙伴,第三代半導(dǎo)體在全球市場(chǎng)有廣闊的應(yīng)用前景,阿斯麥會(huì)全力提供光刻解決方案和服務(wù),支持英諾賽科在這一領(lǐng)域的發(fā)展?!?/span>

“我們應(yīng)用在200mm晶圓生產(chǎn)線上的 XT平臺(tái),包括i-line、KrF和干式ArF等光刻機(jī),是快速增長(zhǎng)的硅基氮化鎵市場(chǎng)的理想長(zhǎng)期解決方案,不僅在生產(chǎn)率和成本方面是這樣, 隨著氮化鎵(GaN)材料在新領(lǐng)域的應(yīng)用,套準(zhǔn)精度和成像要求也會(huì)隨著時(shí)間的推移而擴(kuò)展?!?ASML 深紫外光刻業(yè)務(wù)產(chǎn)品營(yíng)銷(xiāo)和業(yè)務(wù)開(kāi)發(fā)高級(jí)總監(jiān)Toni Mesquida Kuesters說(shuō): “我們致力于幫助英諾賽科實(shí)現(xiàn)其預(yù)期目標(biāo),并期待卓有成效的合作?!?/span>

關(guān)于英諾賽科


英諾賽科成立于2015年12月,是一家硅基氮化鎵芯片集成制造的企業(yè)。隨著科學(xué)技術(shù)的快速發(fā)展,全球電力能源應(yīng)用系統(tǒng)正在發(fā)生巨大轉(zhuǎn)變。我們的愿景就是用先進(jìn)、高效、低成本的硅基氮化鎵技術(shù)助力新時(shí)代高效能源系統(tǒng)的建設(shè)。2017年11月,英諾賽科在珠海建設(shè)完成全球首條8英寸硅基氮化鎵量產(chǎn)線。為了滿足快速爆發(fā)的市場(chǎng)的需求,2020年9月,英諾賽科蘇州工廠建設(shè)完成。作為領(lǐng)先的第三代半導(dǎo)體技術(shù)供應(yīng)商,英諾賽科的IDM全產(chǎn)業(yè)鏈集成制造模式可以為客戶帶來(lái)更加高效、高可靠性的解決方案,其產(chǎn)品可以廣泛應(yīng)用于云計(jì)算(數(shù)據(jù)中心)、汽車(chē)、移動(dòng)電子設(shè)備等領(lǐng)域。

關(guān)于ASML


總部位于荷蘭的ASML是全球芯片制造設(shè)備領(lǐng)導(dǎo)廠商,并且是芯片光刻技術(shù)的領(lǐng)導(dǎo)者。我們的愿景是驅(qū)動(dòng)半導(dǎo)體的各種應(yīng)用來(lái)幫助解決人類(lèi)生活中各種挑戰(zhàn)。為了實(shí)現(xiàn)這個(gè)目標(biāo),我們提供創(chuàng)新的產(chǎn)品和服務(wù)來(lái)幫助芯片制造商不斷微縮芯片。我們不斷提高產(chǎn)品的性能,以幫助客戶持續(xù)提升芯片價(jià)值并降低成本。我們致力于讓芯片的性能更強(qiáng)大、價(jià)格更合理,進(jìn)而促使半導(dǎo)體技術(shù)能更廣泛的應(yīng)用于醫(yī)療、能源、通訊和娛樂(lè)等相關(guān)產(chǎn)品與服務(wù)中30多年來(lái),ASML的成功來(lái)自于和客戶及供貨商緊密合作所共同創(chuàng)造的領(lǐng)先技術(shù)、高效能的流程和優(yōu)秀的員工。ASML在全球16個(gè)國(guó)家的60個(gè)城市設(shè)有辦公室,員工超過(guò)28000。ASML為荷蘭阿姆斯特丹證券交易所和美國(guó)NASDAQ上市公司。更多關(guān)于ASML及其產(chǎn)品和技術(shù)、職業(yè)發(fā)展機(jī)會(huì),請(qǐng)參閱: www.asml.com

January 21, 2021 – InnoScience and ASML reached a volume purchase agreement for upgraded versions of high throughput i-line and KrF TWINSCAN scanners for advanced GaN on Silicon power semiconductors


Leading GaN-on-Silicon Integrated Device Manufacturer Innoscience Technology Co., Ltd. (“Innoscience”) has recently purchased several TWINSCAN scanners from ASML Holding N.V. (“ASML”), the world’s leading provider of lithography systems to the semiconductor industry.  ASML’s XT: 400 and XT: 860 200 mm i-line and KrF scanners, respectively, will be adapted to manufacture GaN-on-Si Power Devices. These tools will not only offer the best performance, but also the highest productivity and lowest cost of ownership available in the market place.  ASML’s dual stage TWINSCAN architecture, currently represents the lithography backbone at most of the 200mm and 300 mm high volume manufacturing sites worldwide. Innoscience will receive the first systems in the second quarter of this year. Innoscience is the world first company in the wide band-gap semiconductor field to apply ASML’s advanced TWINSCAN lithography tool in mass production, this effort will bring the fast growing industry to a new era.


Lithography equipment for growing megatrends


Innoscience, which was founded in December 2015, is a company dedicated to developing GaN on Si power solutions.  Innoscience successfully established the world first 200mm GaN-on-Si Power Device mass production line, to provide a wide range of product including 30V-650V GaN-on-Si power devices. Innoscience product design and performance have reached international advanced level and are currently widely available in Power Delivery charger, 3D camera, portable device including smart phone, laptop, tablet, etc. Innoscience is committed to build a world-class brand and contribute to the wide band-gap semiconductor industry and its eco-system.


GaN-based power devices and circuits enable high switching frequencies and efficient energy management with high power densities. These features are required for rapidly growing applications such as data centers, renewable energy and the next generation of wireless networks. Alongside the much smaller size factor, GaN-on-Si is an ideal candidate for rapid charging and car electrification. Gallium nitride (GaN) is also called “third generation semiconductor”, together with other materials like e.g. silicon carbide (SiC), aluminum nitride (AlN), diamond, and zinc oxide (ZnO).


Chosen by the best in the industry


Jay Son, CEO of InnoScience, said: “I’m honored to announce Innoscience and ASML have entered into a partnership aimed at changing the future with GaN technology. As an innovation leader in the third generation semiconductors, Innoscience needs strong partnerships to fast advance its technology. By creating a cutting-edge solution together with ASML, we will offer added value to our customers, partners, and consumers in fast growing applications such as quick chargers, time-of-flight (ToF) camera, smart phones, electric vehicle, data center, etc. Together, Innoscience and ASML will develop the next-generation of GaN devices, to provide advance solutions to future power world.


Bo Shen, ASML VP and Country Manager of China said, "We are very happy to be a partner of InnoScience. The third generation of semiconductor materials has broad application prospects in the global market. ASML is committed to support customers in this field, with our broad suite of holistic lithography systems and services."


“Our TWINSCAN 200 mm XT scanner platform, including i-line, KrF and dry ArF product lines, is the ideal long-term solution for the rapidly growing GaN-on-Silicon market, not only in terms of productivity and cost of ownership, but also in terms of overlay and imaging requirements, which will evolve over time, as GaN technology is adopted across new applications” said Toni Mesquida Kuesters, Senior Director of Product Marketing & Business Development for DUV Business Line at ASML. “We are committed to help InnoScience achieve their envisaged goals and, and look forward to a fruitful cooperation.”


About Innoscience


Innoscience is an Integrated Device Manufacturer (IDM) company founded in December 2015. With the development of new technologies, the electric power grid across the world is undergoing a massive transformation. Our vision is to create an energy ecosystem with most effective and low-cost Gallium Nitride on Silicon (GaN-on-Si) power solutions. Innoscience first established a mass production line of GaN-on-Si devices in Zhuhai. In order to fulfill the rapidly growing power demands, Innoscience has inaugurated a new facility in the Suzhou in 2020. As a cutting-edge GaN technology provider, Innoscience’s IDM model guarantees high performance and reliability GaN power devices that can be used in various technical fields as cloud computing, vehicle, portable device, etc. For more information, please visit http://www.innoscience.com.cn/.


About ASML


ASML is one of the world’s leading manufacturers of chip-making equipment. Our vision is a world in which semiconductor technology is everywhere and helps to tackle society’s toughest challenges. We contribute to this goal by creating products and services that let chipmakers define the patterns that integrated circuits are made of. We continuously raise the capabilities of our products, enabling our customers to increase the value and reduce the cost of chips. By helping to make chips cheaper and more powerful, we help to make semiconductor technology more attractive for a larger range of products and services, which in turn enables progress in fields such as healthcare, energy, mobility and entertainment. ASML is a multinational company with offices in more than 60 cities in 16 countries, headquartered in Veldhoven, the Netherlands. We employ more than 28,000 people on payroll and flexible contracts (expressed in full time equivalents). ASML is traded on Euronext Amsterdam and NASDAQ under the symbol ASML. More information about ASML, our products and technology, and career opportunities is available on www.asml.com.

 


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